Single Electron Spin Control in Semiconductor Nanowires
نویسندگان
چکیده
We study the level crossing in the energy spectrum due to Rashba-Dresselhaus spinorbit coupling in nanowires modulated by longitudinal potential. By implementing both an analytical methodology and a numerical technique based on the finite element method (FEM), we show that the level crossing point can be manipulated with the application of spin-orbit coupling in parabolic nanowires. In particular, the level crossing point can be found at larger values of k in GaAs nanowires compared to those of InAs nanowires due to large values of the Rashba-Dresselhaus spin-orbit coupling in the latter case.
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